RJE0607JSP_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0607JSP
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
3.0 ^{(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)}
2.0
1.0
2 _{D1rivDerirvOerpOepraetriaotnion}
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
−1.5
−4.5 V
−5 V
−6 V
−8 V
−1.0
−10 V
Pulse Test
−4 V
−0.5
−3.5 V
V_GS = 0 V
0
−2 −4 −6 −8 −10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
−1000
Pulse Test
−800
−600
−400
−200
−1 A
0 ^{ID = −0.5 A}
−2
−4
−6
−8
−10
Gate to Source Voltage V_GS (V)
R07DS0123EJ0200 Rev.2.00
Sep 01, 2010
Preliminary
Maximum Safe Operation Area
−10 _{Ta = 25°C}
1 shot Pulse
1 Driver Operation
Thermal shut down operation area
−1
−0.1
Operation
in this area
is limited R_DS(on)
−0.01
−0.01
−0.1
−1
−10 −100
Drain to Source Voltage V_DS (V)
Note 6:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
−2.0
V_DS = −10 V
Pulse Test
−1.5
−1.0
Tc = 75°C
25°C
−0.5
−40°C
0
0
−2 −4 −6 −8 −10
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
V_GS = −6 V
100
−10 V
10
−0.1
−1
−10
Drain Current I_D (A)
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