RJE0603JPE_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0603JPE
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = −5 A
100
0
−2 −4 −6 −8 −10
Gate to Source Voltage V_GS (V)
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.3 _0.5
0.2
0.1
0.1
0.03
0.02
0.01
1shot
pulse
0.01
10 μ
100 μ
θ_{ch- c(t) =} γ _{s (t) •} θ_{ch- c}
θ_{ch- c = 1.25°C/W, Tc = 25°C}
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
50 Ω
–10 V
V_DD
= –30 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
R07DS0193EJ0200 Rev.2.00
Nov 04, 2010
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