RJE0603JPE_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0603JPE
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 4. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IH(sd)1
I_IH(sd)2
Tsd
Vop
I_{D limt}
Min
–3.5
—
—
—
—
—
—
–3.5
–50
Typ
—
—
—
—
–0.3
–0.11
175
—
—
Max
—
–1.2
–100
–50
—
—
—
–12
—
Unit
V
V
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –12 V, V_DS = 0
Vi = –4.6 V, V_DS = 0
Channel temperature
V_GS = –12 V, V_DS = –10 V ^{Note 4}
Electrical Characteristics
Item
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Output capacitance
Symbol
I_D1
I_D2
I_D3
V_(BR)DSS
Min
—
—
–50
–60
V_(BR)GSS
V_(BR)GSS
I_GSS
I_GSS
I_GSS
I_GS(OP)1
I_GS(OP)2
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
Coss
–16
2.5
—
—
—
—
—
—
–3.4
—
—
—
Typ
—
—
—
—
—
—
—
—
—
–0.8
–0.11
—
—
16
12
1400
Max
–100
–10
—
—
—
—
–200
–800
100
—
—
–10
–4.6
30
15
—
Unit
A
mA
A
V
V
V
A
A
A
mA
mA
A
V
m
m
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
—
77.2
—
s
t_r
—
72.7
—
s
t_d(off)
—
7.7
—
s
t_f
—
7.7
—
s
Body-drain diode forward voltage
V_DF
—
–0.92
—
V
Body-drain diode reverse
t_rr
—
133
—
ns
recovery time
Over load shut down
operation time ^{Note 6}
t_os1
—
6.3
—
ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = –3.5 V, V_DS = –10 V
V_GS = –1.2 V, V_DS = –10 V
V_GS = –12 V, V_DS = –10 V ^{Note 5}
I_D = –10 mA, V_GS = 0
I_G = –800 A, V_DS = 0
I_G = 100 A, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –16 V, V_DS = 0
V_GS = –2.4 V, V_DS = 0
V_GS = –12 V, V_DS = 0
V_GS = –4.6 V, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –10 V, I_D = –1 mA
I_D = –25 A, V_GS = –6 V ^{Note 5}
I_D = –25 A, V_GS = –10 V ^{Note 5}
V_DS = –10 V, V_GS = 0, f =
1MHz
V_GS = –10 V, I_D= –25 A,
R_L = 1.2 
I_F = –50 A, V_GS = 0
I_F = –50 A, V_GS = 0
di_F/dt = 50 A/s
V_GS = –5 V, V_DD = –16 V
R07DS0193EJ0200 Rev.2.00
Nov 04, 2010
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