RJE0603JPE_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0603JPE
Static Drain to Source On State Resistance
vs. Temperature
30
Pulse Test
25
I_D = −25 A
−10 A
−5 A
20
15 _{−6 V}
−25 A
10
I_D = −5 A, −10 A
V_GS = −10 V
5
-50 -25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
100
td(on) tr
10
tf
td(off)
V_GS = −10 V, V_DD = −30 V
PW = 300 μs, duty ≤ 1 %
1
−1
−10
Drain Current I_D (A)
−100
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
Coss
100
0
−10 −20 −30 −40 −50 −60
Drain to Source Voltage V_DS (V)
Preliminary
Body-Drain Diode Reverse
Recovery Time
1000 _{di / dt = 50 A / μs}
V_GS = 0, Ta = 25°C
100
10
−0.1
−1
−10
−100
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
−50
−10 V
−40
−30
V_GS = 0 V, 5 V
−20
−5 V
−10
Pulse Test
0
−0.4 −0.8 −1.2 −1.6 −2.0
Source to Drain Voltage V_SD (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−12
−10
V_DD = −16 V
−8
−6
−4
−2
0
0.001
0.003
0.01
Shutdown Time of Load-Short Test Pw (s)
R07DS0193EJ0200 Rev.2.00
Nov 04, 2010
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