RJE0603JPE_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0603JPE
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
−100
−80
−10 V _{−8 V}
−60
−6 V
−40
V_GS = −4.5 V
−20
Pulse Test
0
−2 −4
−6
−8 −10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
−800
−700
Pulse Test
−600
−500
−400
−300
I_D = −25 A
−200
−100
−5 A
−10 A
0
−2 −3 −4 −5 −6 −7 −8 −9 −10
Gate to Source Voltage V_GS (V)
R07DS0193EJ0200 Rev.2.00
Nov 04, 2010
Preliminary
Maximum Safe Operation Area
−1000
Ta = 25°C
−100
Thermal shut down operation area
−10
DC Operation
(Tc = 25°C)
−1
−0.01
Operation
in this area
is limited R_DS(on)
−0.1
−1
−10
−100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
−100
−10
−1
150°C
−0.1
25°C
−0.01
Tc = −40°C
V_DS = −10 V
−0.001
0
Pulse Test
−2 −4 −6 −8 −10
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
100
−6 V
10
V_GS = −10 V
1
Pulse Test
0.1
−0.1
−1
−10
Drain Current I_D (A)
−100
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