RJE0601JPE Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0601JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−12
−10
−8
−6
V_DD = −16 V
−4
−2
0
0.0001
0.001
0.01
0.1
Shutdown Time of Load-Short Test Pw (S)
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = −5 A
dv/dt
V_GS ≥ 500 V/ms
100
0
−2
−4 −6 −8 −10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.02
0.01
1shot ^pulse
0.05
0.01
0.00001
0.0001
0.001
θch - c(t) = γs (t) x θch - c
θch - c = 2.5°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
0.01
0.1
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
50 Ω
–10 V
V_DD
= –30 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
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