RJE0601JPE Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0601JPE
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
−100
Pulse Test
−10 V _{−8 V −6 V}
−50
−5.5 V
−5 V
−4.5 V
V_GS = −4 V
0
−5
−10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
−2000
Pulse Test
−1500
−1000
−500
−5 A
I_D = −20 A
−10 A
0
−2 −4 −6 −8 −10 −12
Gate to Source Voltage V_GS (V)
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
Preliminary
Maximum Safe Operation Area
−1000 _{Ta = 25°C}
Thermal shut down operation area
−100
1 _ms
−10
DC Operation
(Tc = 25°C)
−1
Operation
in this area
PW = 10 ms
is limited R_DS(on)
−0.1
−0.1
−1
−10
−100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
−40
V_DS = −10 V
Pulse Test
−30
−20
Tc = 75°C
−10
25°C
−25°C
−0
0
−2
−4
−6
−8 −10
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
100
V_GS = −6 V
−10 V
10
1
−0.1
−1
−10
Drain Current I_D (A)
−100
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