RJE0601JPE Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0601JPE
Static Drain to Source On State Resistance
vs. Temperature
50
Pulse Test
40
I_D = −20 A
−10 A
−5 A
30
V_GS = −6 V
I_D = −20 A
20
−10 A, −5 A
−10 V
10
−50 −25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
di / dt = 50 A /μs
V_GS = 0, Ta = 25°C
10
−0.1
−1
−10
−100
Reverse Drain Current I_DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
Coss
100
−0 −10 −20 −30 −40 −50 −60
Drain to Source Voltage V_DS (V)
Preliminary
Forward Transfer Admittance vs.
Drain Current
100
Tc = −25°C
10
25°C
1
75°C
0.1
−0.1
V_DS = −10 V
Pulse Test
−1
−10
−100
Drain Current I_D (A)
Switching Characteristics
100
V_GS = −10 V, V_DD = −30 V
PW = 300 μs, duty ≤ 1 %
td(on)
tr
10
td(off)
tf
1
−0.1
−1
−10
−100
Drain Current I_D (A)
Reverse Drain Current vs.
Source to Drain Voltage
–40
Pulse Test
–30
–10 V
–20
–5 V
–10
V_GS = 0 V
0
–0.5
–1.0
–1.5
Source to Drain Voltage V_SD (V)
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
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