RJE0601JPE Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0601JPE
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Min
–3.5
—
—
—
—
—
—
—
Vop
I_{D limt}
–3.5
–40
Typ
—
—
—
—
—
–0.8
–0.35
175
Max
—
–1.2
–100
–50
–1
—
—
—
—
–12
–60
—
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Channel temperature
(dv/dt V_GS  500 V/ms)
V_GS = –12 V, V_DS = –10 V ^{Note 4}
Electrical Characteristics
Item
Symbol Min
Typ
Max Unit
Drain current
Drain to source breakdown
voltage
I_D1
—
—
–40
A
I_D2
—
—
–10
mA
I_D3
–40
–60
—
A
V_(BR)DSS
–60
—
—
V
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
V_(BR)GSS
–16
—
—
V
V_(BR)GSS
2.5
—
—
V
I_GSS1
—
—
–100
A
I_GSS2
—
—
–50
A
I_GSS3
—
—
–1
A
I_GSS4
—
—
100
A
I_GS(OP)1
—
–0.8
—
mA
I_GS(OP)2
—
–0.35
—
mA
I_DSS
—
—
–10
A
V_GS(off)
–2.2
—
–3.4
V
|y_fs|
8.4
27
—
S
R_DS(on)
—
26
45
m
R_DS(on)
—
22
27
m
Coss
—
860
—
pF
Turn-on delay time
t_d(on)
—
12.6
—
s
Rise time
t_r
—
12.5
—
s
Turn-off delay time
t_d(off)
—
3.7
—
s
Fall time
t_f
—
2.2
—
s
Body-drain diode forward voltage
V_DF
—
–0.95
—
V
Body-drain diode reverse
t_rr
—
100
—
ns
recovery time
Over load shut down
operation time ^{Note 6}
t_os1
—
2.3
—
ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = –3.5 V, V_DS = –10 V
V_GS = –1.2 V, V_DS = –10 V
V_GS = –12 V, V_DS = –10 V ^{Note 5}
I_D = –10 mA, V_GS = 0
I_G = –800 A, V_DS = 0
I_G = 100 A, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_GS = –1.2 V, V_DS = 0
V_GS = 2.4 V, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –10 V, I_D = –1 mA
I_D = –20 A, V_DS = –10 V ^{Note 5}
I_D = –20 A, V_GS = –6 V ^{Note 5}
I_D = –20 A, V_GS = –10 V ^{Note 5}
V_DS = –10 V, V_GS = 0, f = 1MHz
V_GS = –10 V, I_D= –20 A,
R_L = 1.5 
I_F = –40 A, V_GS = 0
I_F = –40 A, V_GS = 0
di_F/dt = 50 A/s
V_GS = –5 V, V_DD = –16 V
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
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