IRF7555PBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET® Power MOSFET

5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF7555PbF
100
ID
TOP
-1.3A
-2.4A
80
BOTTOM -3.0A
60
40
20
0
25
50
75
100
125
150
Starting T_J, Junction Temperature ( ^°C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1000
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
0.1
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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