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| IRF7555PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRF7555PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 âââ âââ V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ -0.005 âââ V/°C
âââ âââ 0.055
 âââ 0.105 â¦
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -4.3A Â
VGS = -2.5V, ID = -3.4A Â
VGS(th)
Gate Threshold Voltage
-0.60 âââ -1.2 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
2.5 âââ âââ S VDS = -10V, ID = -0.8A
IDSS
Drain-to-Source Leakage Current
âââ âââ -1.0
âââ âââ -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -12V
âââ âââ 100
VGS = 12V
Qg
Total Gate Charge
âââ 10 15
ID = -3.0A
Qgs
Gate-to-Source Charge
âââ 2.1 3.1 nC VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 2.5 3.7
VGS = -5.0V
td(on)
Turn-On Delay Time
âââ 10 âââ
VDD = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 46 âââ ns ID = -2.0A
âââ 60 âââ
RG = 6.0â¦
âââ 64 âââ
RD = 5.0⦠Â
Ciss
Input Capacitance
âââ 1066 âââ
VGS = 0V
Coss
Output Capacitance
âââ 402 âââ pF VDS = -10V
Crss
Reverse Transfer Capacitance
âââ 126 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
ÂÂÂ
ÂÂÂ
âââ
âââ
âââ
Typ. Max.
ÂÂÂ -1.3
ÂÂÂ -34
âââ -1.2
54 82
41 61
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.6A, VGS = 0V Â
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 ISD ⤠-2.0A, di/dt ⤠-140A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
2
 Surface mounted on FR-4 board, t ⤠10sec.
Â
Starting TJ = 25°C, L = 8.0mH
RG = 25â¦, IAS = -3.0A.
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