IRF7555PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET® Power MOSFET

100
10
VGS
TOP -7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
IRF7555PbF
100
10
VGS
TOP -7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
1
-1.50V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
-1.50V
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25° C
T_J = 150° C
10
V DS= -15V
20µs PULSE WIDTH
1
1.0
2.0
3.0
4.0
5.0
-V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -4.3A}
1.5
1.0
0.5
V_GS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3