IRF7555PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRF7555PbF
1600
1200
800
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
400
C_oss
C_rss
0
1
10
100
-V_DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 _{ID = --44..35AA}
12
9
V_DS = -10V
6
3
0
0
4
8
12
16
20
24
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25° C
0.1
0.0
V_GS = 0 V
0.4
0.8
1.2
1.6
2.0
2.4
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
0.1
1
10
100
-V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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