HAT3021R_15 Datasheet, PDF (5/13 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3021R
• P Channel
Item
Drain to source breakdown
voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
–80
±20
—
—
–1.0
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
165
200
3.3
930
90
56
16
2.1
2.4
20
12
40
5.5
–0.83
30
Max
—
—
±10
–1
–2.5
210
290
—
—
—
—
—
—
—
—
—
—
—
–1.08
—
Unit
V
Test Conditions
I_D = –10 mA, V_GS = 0
V
I_G = ±100 µA, V_DS = 0
µA
V_GS = ±16 V, V_DS = 0
µA
V_DS = –80 V, V_GS = 0
V
V_DS = –10 V, I _D = –1 mA
mΩ
I_D = –1.3 A, V_GS = –10 V ^Note4
mΩ
I_D = –1.3 A, V_GS = – 4.5 V ^Note4
S
I_D = –1.3 A, V_DS = –10 V ^Note4
pF V_DS = –10 V
pF
V_GS = 0
pF ^{f = 1MHz}
nC V_DD = –25 V
nC ^VGS ^{= –10 V}
nC ^{ID = -2.6 A}
ns
V_GS = –10 V, I_D = –1.3 A
ns
V_DD ≈ –30 V
ns
R_L = 23.0 Ω
ns
R_g = 4.7 Ω
V
IF = –2.6 A, V_GS = 0 ^Note4
ns IF = –2.6 A, V_GS = 0
diF/ dt =100A/µs
Rev.2.00, Oct.06.2004, page 3 of 10