HAT3021R_15 Datasheet, PDF (11/13 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3021R
Reverse Drain Current vs.
Source to Drain Voltage
–5.0
–10 V
–5 V
–2.5
V_GS = 0V, 5 V
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 _{1shot pulse}
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
D=
PW
T
T
0.001
10 µ 100 µ 1 m 10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
-10 V
VDD
= -30 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t_f
Rev.2.00, Oct.06.2004, page 9 of 10