HAT3021R_15 Datasheet, PDF (4/13 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3021R
Electrical Characteristics
• N Channel
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
80
Gate to source breakdown voltage V_(BR)GSS ±20
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.0
Static drain to source on state
resistance
R_DS(on)
—
R_DS(on)
—
Forward transfer admittance
|y_fs|
4.2
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
—
90
100
7.0
400
57
24
7.3
1.1
1.3
6.0
4.0
39
3.5
0.83
30
Max
—
—
± 10
1
2.5
115
145
—
—
—
—
—
—
—
—
—
—
—
1.08
—
(Ta = 25°C)
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 80 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 1.7 A, V_GS = 10 V ^Note4
I_D = 1.7 A, V_GS = 4.5 V ^Note4
I_D = 1.7 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 25 V
V_GS = 10 V
I_D = 3.4 A
V_GS = 10 V, I_D = 1.7 A
V_DD ≅ 30 V
R_L = 17.6 Ω
Rg = 4.7 Ω
IF = 3.4 A, V_GS = 0 ^Note4
IF = 3.4 A, V_GS = 0
diF/ dt = 100 A/ µs
Rev.2.00, Oct.06.2004, page 2 of 10