HAT2215R Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2215R, HAT2215RJ
Reverse Drain Current vs.
Source to Drain Voltage
10
10 V
V_GS = 0 V, –5 V
5
5V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
VDS
= 30 V
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.0
IAP = 3.4 A
1.6
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
1.2
0.8
0.4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
Vin
10 V
Avalanche Test Circuit
V_DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
Avalanche Waveform
E_AR =
1
2
L • I_AP² •
V_DSS
V_{DSS –} V_DD
V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Rev.3.00 Dec. 22, 2004 page 5 of 7