HAT2215R Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2215R, HAT2215RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
REJ03G0486-0300
Rev.3.00
Dec.22.2004
Outline
SOP-8
2
G
78
DD
4
G
S1
MOS1
56
DD
S3
MOS2
8 ^{7 65}
1 ²³⁴
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT2215R
HAT2215RJ
Drain to source voltage
V_DSS
80
80
Gate to source voltage
V_GSS
±20
±20
Drain current
Drain peak current
I_D
I_{D(pulse)Note1}
3.4
20.4
3.4
20.4
Reverse drain current
I_DR
3.4
Avalanche current
I_AP ^{Note 2}
—
Avalanche energy
E_AR ^{Note 2}
—
Channel dissipation
Pch ^Note3
1.5
Channel dissipation
Pch ^Note4
2.2
3.4
3.4
1.54
1.5
2.2
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
Rev.3.00 Dec. 22, 2004 page 1 of 7