HAT2215R Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2215R, HAT2215RJ
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Zero gate voltage
drain current
HAT2215R
HAT2215RJ
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 5. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_GSS
I_DSS
I_DSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
80
±20
—
—
—
—
1.0
—
—
4.2
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
88
100
7.0
400
57
24
7.3
1.1
1.3
6.0
4.0
39
3.5
0.83
30
Max
—
—
±10
1
—
10
2.5
115
145
—
—
—
—
—
—
—
—
—
—
—
1.08
—
Unit
V
V
µA
µA
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_GS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 80 V, V_GS = 0
V_DS = 64 V, V_GS = 0
Ta = 125°C
V_DS = 10 V, I_D = 1 mA
I_D = 1.7 A, V_GS = 10 V ^Note5
I_D = 1.7 A, V_GS = 4.5 V ^Note5
I_D = 1.7 A, V_DS = 10 V ^Note5
V_DS = 10 V
V_GS = 0
f = 1MHz
V_DD = 25 V
V_GS = 10 V
I_D = 3.4 A
V_GS =10 V, I_D = 1.7 A
V_DD ≈ 30 V
R_L = 17.6 Ω
R_g = 4.7 Ω
IF = 3.4 A, V_GS = 0 ^Note5
IF =3.4 A, V_GS = 0
diF/ dt = 100 A/µs
Rev.3.00 Dec. 22, 2004 page 2 of 7