HAT2215R Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2215R, HAT2215RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive2ODprieveraOtipoenration}
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
4.5 V
3.4 V
10 V
3.2 V
5
3.0 V
V_GS = 2.8 V
Pulse Test
0
5
Drain to Source Voltage V_DS
10
(V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
500
Pulse Test
400
300
200
I_D = 2 A
100
1A
0.5 A
0
5
10
15
20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
100
10
1
0.1
DC
Operation in
this area is
PW
Operation
= ₁₀
(PW
11m00s10^µsµs
ms _(1shot)
≤ ₁^N₀o_{ste) 4}
limited by R_DS(on)
0.01
Ta = 25°C
0.001 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
5
Tc = 75°C
25°C
−25°C
0
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
100 ^{VGS = 4.5 V}
10 V
10
0.1
Pulse Test
1
10
100
Drain Current I_D (A)
Rev.3.00 Dec. 22, 2004 page 3 of 7