HAT2208R_16 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2208R
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
10
8
10 V
6
5V
V_GS = 0 V
4
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
I_AP = 9 A
16
V_DD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.001
0.01
1shot ^pulse
θch - f(t) = γs (t) x θch - f
θch - f = 100°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
0.0001
10 μ 100 μ 1 m 10 m 100 m 1
PW
T
10
100
1000 10000
Pulse Width PW (s)
Avalanche Test Circuit
Vin
15 V
V_DS
Monitor
Rg
50 Ω
L
I_AP
Monitor
D. U. T
V_DD
Avalanche Waveform
E_AR =
1
2
V_DSS
L • I_AP2 • _{VDSS - VDD}
I_AP
I_D
V_(BR)DSS
V_DS
0 ^VDD
REJ03G1595-0201 Rev.2.01
Nov. 25, 2016
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