HAT2208R_16 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2208R
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
40
V_GS = 4.5 V
20
10 V
0
-25 0 25 50
I_D = 1 A, 2 A, 5 A
1 A, 2 A, 5 A
75 100 125 150
Case Temperature Tc (°C)
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
0.1
di/dt = 100 A/μs
V_GS = 0, Ta = 25°C
1
10
100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
I_D = 9 A
40 ^VDD ^{= 25 V}
10 V
5V
30 _VDS
20
V_GS
16
12
20
8
V_DD = 25 V
10
10 V
4
5V
0
0
4
8
12 16 20
Gate Charge Qg (nc)
Preliminary
Forward Transfer Admittance vs.
Drain Current
1000
100
Tc = –25°C
10
25°C
1
75°C
V_DS = 10 V
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Ciss
300
100
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
100
td(off)
10
tr
td(on)
tf
1
0.1
1
10
100
Drain Current I_D (A)
REJ03G1595-0201 Rev.2.01
Nov. 25, 2016
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