HAT2208R_16 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2208R
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 19.0 mΩ typ. (at V_GS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1595-0201
Rev.2.01
Nov.25.2016
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
θch-a ^Note3
30
±20
9
72
9
9
8.1
2.0
62.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
RJE03G1595-0201 Rev.2.01
Nov. 25, 2016
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