HAT2208R_16 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2208R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
10 V
4.5 V
3.0 V
8
Pulse Test
6
2.8 V
4
V_GS = 2.6 V
2
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
100
I_D = 5 A
50
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
REJ03G1595-0201 Rev.2.01
Nov. 25, 2016
Preliminary
Maximum Safe Operation Area
500
100
10
1
PW
DC
Operation
= ₁₀
(PW
Operation in
this area is
10
1
100
ms
μ_s
ms
≤ ₁₀^No_{ste) 4}
μ_s
0.1 ^{limited by RDS(on)}
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 4 : When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
Tc = 75°C
4
2
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = 4.5 V
20
10 V
10
5
2
1
0.1
1
10
100
Drain Current I_D (A)
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