HAT2085T Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2085T
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
4
10 V
2
5V
V_GS = 0
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
5
I_D = 10 mA
4
1 mA
3
0.1 mA
2
1
V_DS = 10 V
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 139°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D = ^PW
T
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m
1
10
100 1000 10000
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
10 Ω
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DD
= 100 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
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