HAT2085T Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2085T
Main Characteristics
Power vs. Temperature Derating
2.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
1.5
1.0
0.5
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
Pulse Test
10 V
8
8V
7V
6
6V
4
2
5V
V_GS = 4.5 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.5
1.0
I_D = 1.4 A
0.5
1.0 A
0.5 A
0
0
5
10
15
20
Gate to Source Voltage V_GS (V)
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Page 3 of 6
Maximum Safe Operation Area
100
10
1
0.1
0.01
10 µs
PW ^{1 ms 100 µs}
DC _Operation
Operation in
(PW
= _{10 ms}
this area is
limited by R_{DS (on)}
≤ ₁₀ N_{so)te 4}
Ta = 25°C
1shot pulse
0.001
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4
Tc = 75°C
2
25°C
–25°C
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
V_GS = 10 V
5 ^{Pulse Test}
2
1
0.5
0.2
0.1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)