HAT2085T Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2085T
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
V _{(BR) DSS}
200
—
—
I_GSS
—
—
±0.1
I_DSS
—
—
1
V_{GS (off)}
3.0
—
4.5
R_{DS (on)}
— 0.49 0.64
|y_fs|
1.0
1.7
—
Ciss
—
300
—
Coss
—
43
—
Crss
—
12
—
V I_D = 10 mA, V_GS = 0
µA V_GS = ±30 V, V_DS = 0
µA V_DS = 200 V, V_GS = 0
V I_D = 1 mA, V_DS = 10 V
Ω
I_D = 0.7 A, V_GS = 10 V ^{Note 3}
S
I_D = 0.7 A, V_DS = 10 V ^{Note 3}
pF V_DS = 25 V
pF VGS = 0
pF ^{f = 1 MHz}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body to drain diode forward voltage
Body to drain diode reverse recovery time
t_{d (on)}
t_r
t_{d (off)}
t_f
Qg
Qgs
Qgd
V_DF
t_rr
—
21
—
ns V_DD ≅ 100 V, I_D = 0.7 A
—
11
—
ns VGS = 10 V
—
48
—
ns ^RL ^{= 143 Ω}
—
18
—
ns ^{Rg = 10 Ω}
—
10
—
nC V_DD = 160 V
—
1.8
—
nC VGS = 10 V
—
4.8
—
nC ^ID ^{= 1.4 A}
—
0.8
1.2
V
I_F = 1.4 A, V_GS = 0 ^{Note 3}
—
65
—
ns I_F = 1.4 A, V_GS = 0
di_F/dt = 100 A/µs
Note: 3. Pulse test
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
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