HAT2085T Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2085T
Static Drain to Source on State Resistance
vs. Temperature
2.0
V_GS = 10 V
Pulse Test
1.5
I_D = 1.4 A
1.0
0.5
0.5 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
1
10
100
1000
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
400
16
I_D = 2 A
V_GS
300
200
V_DS
12
V_DD = 50 V
100 V
160 V
8
100
0
0
4
V_DD = 160 V
100 V
50 V
0
4
8
12 16 20
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
10
V_DS = 10 V
5 ^{Pulse Test}
Tc = –25°C
2
25°C
1
75°C
0.5
0.2
0.1
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
1000
500
200
100
50
20
10
5
Ciss
Coss
Crss
2 ^VGS ^{= 0}
f = 1 MHz
1
0 20 40 60 80 100
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
300
V_GS = 10 V, V_DD = 100 V
PW = 5 µs, duty ≤ 1 %
Rg = 10 Ω
100 ^tf
tr
td(off)
30
td(on)
10
tf
tr
3
1
0.1 0.2 0.5 1 2
5 10 20
Drain Current I_D (A)
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
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