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HAT1126R Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1126R, HAT1126RJ
Reverse Drain Current vs.
Source to Drain Voltage
â10
â10 V
Pulse Test
â8
â6
â5 V
â4
VGS = 0, 5 V
â2
0
â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
10 Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
D=1
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01
0.001
1shot pulse
0.0001
10 µ 100 µ 1 m
θch â f(t) = γs (t) ⢠θch â f
θch â f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
10 Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D=1
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01
0.001
1shot pulse
0.0001
10 µ 100 µ 1 m
θch â f(t) = γs (t) ⢠θch â f
θch â f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
Rev.1.00 Sep. 10, 2004, page 5 of 7
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