HAT1126R Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1126R, HAT1126RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10
–10 V
Pulse Test
–4 V
–8
–3 V
–6
–4
–2
V_GS = –2.5 V
0
–1 –2 –3 –4 –5
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–400
Pulse Test
–300
–200
I_D = –5 A
–100
–3 A
–1 A
0
–5
–10
–15
–20
Gate to Source Voltage V_GS (V)
–100
–10
–1
–0.1
Maximum Safe Operation Area
10 µs
DC
PW
100 _µs
Operation
Operation in
this area is
limited by R DS(on)
= ₁₀
(PW
ms
< ₁₀^N_so)te6
Ta = 25°C
1 shot Pulse
–0.01
–0.01 –0.1
–1
–10 –100
Drain to Source Voltage V_DS (V)
Note 6:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
–8
–6
–4
Tc = 75°C
25°C
–2
−25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
200
100
V_GS = –4.5 V
50
–10 V
20
10
–1
–3
–10
–30
–100
Drain Current I_D (A)
Rev.1.00 Sep. 10, 2004, page 3 of 7