HAT1126R Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1126R, HAT1126RJ
Static Drain to Source on State Resistance
vs. Temperature
160
Pulse Test
120
80
V_GS = –4.5 V
–5 A
–3 A
–1 A
40
I_D = –1, –3, –5 A
–10 V
0
–50 –25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
5
2
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
1
–0.1 –0.3
–1
–3
–10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –50 V
–25 V
–20
–10 V
–4
–40
–8
–60 ^VDS
–12
–80
–100 ^{ID = –6 A}
0
16
V_DD = –50V
–25V
–10V
32 48
V_{GS –16}
–20
64 160
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
3
25°C
1
75°C
0.3
0.1
0.03
0.01
–0.01 –0.03 –0.1 –0.3
V_DS = –10 V
Pulse Test
–1 –3 –10
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
Ciss
1000
300
Coss
100
Crss
30 _{VGS = 0}
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
30
tf
10
td(on)
td(off)
tr
3 _{VGS = –10 V, VDD = –30 V}
1 ^{PW = 5 µs, RG = 4.7 Ω, duty ≤ 1 %}
–0.1 –0.3
–1
–3
–10
Drain Current I_D (A)
Rev.1.00 Sep. 10, 2004, page 4 of 7