HAT1126R Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
78
56
DD
DD
2
4
G
G
S1
MOS1
S3
MOS2
8 ^{7 65}
1 ²³⁴
REJ03G0406-0100
Rev.1.00
Sep.10.2004
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT1126R
HAT1126RJ
Drain to source voltage
V_DSS
–60
–60
Gate to source voltage
V_GSS
±20
±20
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
I_D
I_D (pulse)^Note1
I_APNote4
E_ARNote4
Pch^Note2
Pch^Note3
–6.0
–48
—
—
2
3
–6.0
–48
–6.0
3.08
2
3
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
W
°C
°C
Rev.1.00 Sep. 10, 2004 page 1 of 7