HAT1110R Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1110R
Reverse Drain Current vs.
Source to Drain Voltage
–2.5
Pulse Test
–2.0
–1.5
–1.0
–10 V
–5 V
–0.5
V_GS = 0V, 5 V
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1shot
pulse
θch - f(t) = γs (t) x θch - f
θch - f = 180°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
D=
PW
T
T
0.001
10 µ 100 µ 1 m 10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1shot ^pulse
θch - f(t) = γs (t) x θch - f
θch - f = 230°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
D=
PW
T
T
0.001
10 µ 100 µ 1 m 10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
Rev.2.00, Oct.07.2007, page 5 of 7