HAT1110R Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1110R
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10 s)
3.0
2.0
1.0
1 _{Driv2eDOrivpeerOaptieornation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–2.5
–10 V
–5 V
–4 V
–2.0
–1.5
–3.5 V
–1.0
V_GS = –3 V
–0.5
Pulse Test
0
–5
–10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
–5
Pulse Test
–4
–3
–2
–1
I_D = –1 A
–0.5 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
10
1
PW
1
100
ms
10
µ_s
µ_s
0.1
DC
Operation
= ₁₀
(PW
ms
(1shot)
Operation in
≤ ₁₀^No_{ste) 5}
this area is
0.01 limited by R_DS(on)
Ta = 25°C
0.001 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
–2.0
Tc = −25°C
25°C
75°C
–1.0
V_DS = –10 V
Pulse Test
0 _{–1.0 –2.0 –3.0 –4.0 –5.0}
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
V_GS = –4.5 V
1
–10 V
0
0.1
1
10
Drain Current I_D (A)
Rev.2.00, Oct.07.2007, page 3 of 7