HAT1110R Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1110R
Silicon P Channel Power MOS FET
Power Switching
Features
• Capable of –4.5 V gate drive
• Low drive current
• High density mounting
Outline
SOP-8
78
56
DD
DD
2
4
G
G
S1
MOS1
S3
MOS2
8 ^{7 65}
1 ²³⁴
REJ03G0416-0200
Rev.2.00
Oct.07.2004
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
–80
Gate to source voltage
V_GSS
±20
Drain current
Drain peak current
I_D
–1
I_{D(pulse)Note1}
–6
Reverse drain current
Channel dissipation
Channel dissipation
I_DR
–1
Pch ^Note2
1.2
Pch ^Note3
1.8
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.2.00, Oct.07.2004, page 1 of 7