HAT1055R Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1055R, HAT1055RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1
Pulse Test
–0.8
–0.6
–0.4
–0.2
0
0
I_D = –5 A
–2 A
–1 A
–4 –8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1 ^{VGS = –4.5 V}
0.05
–10 V
0.02
0.01
–1
–3
–10 –30
Drain Current I_D (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
–5 A
0.15
I_D = –1, –2 A
V_GS = –4.5 V
0.10
–5 A
0.05
0
–40
–10 V
–1, –2 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = –25°C
5
2
25°C
75°C
1
V _DS = –10 V
Pulse Test
0.5
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)
Rev.1.00, Aug.29.2003, page 5 of 9