HAT1055R Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1055R, HAT1055RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
REJ03G0067-0100Z
Rev.1.00
Aug.29.2003
SOP-8
78
DD
8 ^{7 65}
1 ²³⁴
56
DD
2
4
G
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Rev.1.00, Aug.29.2003, page 1 of 9