HAT1055R Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1055R, HAT1055RJ
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS –60
Gate to Source breakdown voltage V_(BR)GSS ±20
Zero gate voltage drain current I_DSS
—
Zero gate voltage HAT1055R I_DSS
—
drain current
HAT1055RJ I_DSS
—
Gate to source leak current
I_GSS
—
Gate to source cutoff voltage
V_GS(off) –1.0
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
|y_fs|
3
R_DS(on) —
R_DS(on) —
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg
—
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
td(on) —
Rise time
tr
—
Turn-off delay time
td(off) —
Fall time
tf
—
Body-drain diode forward voltage V_DF
—
Body-drain diode reverse recovery trr
—
time
Notes: 5. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
–1
µA
—
—
µA
—
–10 µA
—
±10 µA
—
–2.5 V
5
—
S
60
76
mΩ
90
130 mΩ
1350 —
pF
135 —
pF
85
—
pF
21
—
nC
3
—
nC
4
—
nC
20
—
ns
15
—
ns
55
—
ns
10
—
ns
–0.85 –1.10 V
25
—
ns
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –48 V, V_GS = 0
Ta = 125°C
V_GS = ±16 V, V_DS = 0
V_DS = –10 V, I_D = –1 mA
I_D = –2.5 A^Note5, V_DS = –10 V
I_D = –2.5 A^Note5, V_GS = –10 V
I_D = –2.5 A^Note5, V_GS = –4.5 V
V_DS = –10 V, V_GS = 0
f = 1 MHz
V_DD = –25 V
V_GS = –10 V
I_D = –5 A
V_GS = –10 V, I_D= –2.5 A
V_DD ≅ –30 V
R_L = 12 Ω
R_G = 4.7 Ω
I_F = –5 A, V_GS = 0^Note5
I_F = –5 A, V_GS = 0
diF/dt = 100 A/µs
Rev.1.00, Aug.29.2003, page 3 of 9