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HAT1055R Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1055R, HAT1055RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 à 40 à 1.6 mm) PW ⤠10 s
3.0
2.0
1.0
1 Drive Operation
0
50
100
150
200
Ambient Temperature Ta (°C)
â100
â30
â10
â3
â1
â0.3
â0.1
â0.03
â0.01
Maximum Safe Operation Area
10 µs
100
OthpiseararetioaDnCisiOnperationP(WPW=<11N100ommtse)ss6
µs
limited by RDS(on)
â0.003
Ta = 25°C
1 shot Pulse
â0.001
â0.1 â0.3 â1
â3 â10 â30 â100
Drain to Source Voltage VDS (V)
Note 6: When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6 mm)
Typical Output Characteristics
â10
â10 V
Pulse Test
â8
â6 V
â4.5 V
â6
â3.5 V
Typical Transfer Characteristics
â10
VDS = â10 V
Pulse Test
â8
â6
â4
â4
â2
VGS =â2.5 V
0
â2 â4 â6 â8 â10
Drain to Source voltage VDS (V)
â2
Tc = 75°C
25°C
â25°C
0
â1 â2 â3 â4 â5
Gate to Source Voltage VGS (V)
Rev.1.00, Aug.29.2003, page 4 of 9
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