FY8ABJ-03 Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
–10
Tch = 25°C
ID = –8A
–8
VDS =
–25V
–6
–20V
–10V
–4
–2
0
0
20 40 60 80 100
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–40
VGS = 0V
Pulse Test
–32
Tc = 25°C
75°C
–24
125°C
–16
–8
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 ^{VGS = –10V}
ID = –8A
5 _{Pulse Test}
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
–2.0
–1.6
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VDS = –10V
ID = –1mA
–1.2
–0.8
–0.4
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10²
7
5 _{D = 1.0}
3
2
0.5
10¹
7
0.2
5
0.1
3
2
0.05
10⁰
7
5
3
2
10^–1
7
5
3
2
0.02
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2
10^–4 2 3 5710^–3 23 5710^–223 5710^–12 3 5710⁰ 2 3 5710¹ 2 3 5710² 2 3 5710³
PULSE WIDTH tw (s)
Sep.1998