FY8ABJ-03 Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FY8ABJ-03
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
“

Dimensions in mm
q 4V DRIVE
q VDSS ............................................................................... –30V
q rDS (ON) (MAX) ............................................................. 20mΩ
q ID ......................................................................................... –8A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
Œ

5.0
1.8 MAX.
0.4
1.27
ŒŽ

Œ  Ž SOURCE
 GATE
 ‘ ’ “ DRAIN
‘’“
SOP-8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–8
–56
–8
–2.1
–8.4
2.0
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998