FY8ABJ-03 Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –8A, VGS = –10V
ID = –4A, VGS = –4V
ID = –8A, VGS = –10V
ID = –8A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –4A, VGS = –10V, RGEN = RGS = 50Ω
IS = –2.1A, VGS = 0V
Channel to ambient
IS = –2.1A, dis/dt = 50A/µs
Min.
–30
—
—
–1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–2.0
14
26
0.112
19
3650
900
385
30
55
250
105
–0.77
—
100
Max.
—
±0.1
–0.1
–2.5
20
37
0.160
—
—
—
—
—
—
—
—
–1.20
62.5
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–10²
–7
–5
–3
–2
–10¹
–7
–5
–3
–2
tw =
1ms
10ms
–10⁰
–7
–5
–3
–2
–10^–1
–7
–5
–3
–2
Tc = 25°C
Single Pulse
100ms
DC
–10^–2_{–10–2 –2–3 –5–7–10–1–2–3 –5–7–100 –2–3 –5–7–101–2–3 –5–7–102}
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
VGS = –10V
–6V –5V
–40
–8V
–4V
–30
Tc = 25°C
Pulse Test
–20
–3V
–10
PD = 2W
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS =
–10V
–16
Tc = 25°C
–4V _{Pulse Test}
–5V
–6V
–3V
–8V
–12
–8
–2.5V
–4
PD = 2W
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998