FY8ABJ-03 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

–2.0
–1.6
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
–1.2
–0.8
–0.4
0
0
ID = –32A
–24A
–16A
–8A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–40
–32
Tc = 25°C
VDS = –10V
Pulse Test
–24
–16
–8
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
10⁴
VGS = 0V
f = 1MHZ
7
5
Ciss
3
2
10³
Coss
7
5
Crss
3
2–5–7_{–10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3}
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
Tc = 25°C
Pulse Test
VGS = –4V
32
24
16
–10V
8
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
7
5
Tc =25°C 75°C 125°C
3
2
10¹
7
5
VDS = –10V
Pulse Test
3
2
10⁰
–5
–7–10⁰
–2 –3 –5 –7–10¹
–2 –3 –5
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
Tch = 25°C
7
VDD = –15V
5
VGS = –10V
td(off)
RGEN = RGS = 50Ω
3
2
tf
10²
7
tr
5
3
td(on)
2
10¹
–10^–1 –2 –3 –5 –7–10⁰ –2 –3 –5 –7–10¹
DRAIN CURRENT ID (A)
Sep.1998