FY8AAJ-03F Datasheet, PDF (5/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET

FY8AAJ-03F
On-State Resistance vs.
Channel Temperature (Typical)
10¹
7 ^{VGS = 10V}
5
4
ID = 8A
Pulse Test
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
Vin Monitor
RGEN
D.U.T.
Vout
Monitor
RL
RGS
VDD
Threshold Voltage vs.
Channel Temperature (Typical)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50 0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
10² D = 1.0
7
5 ^0.5
3
2 0.2
10^{1 0.1}
7
5
0.05
3 0.02
2
10⁰
0.01
PDM
7
5
tw
3
Single Pulse
T
2
D
=
tw
T
10^–1_{10–4 2 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103}
Pulse Width tw (s)
Switching Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
Rev.1.00, Aug.20.2004, page 5 of 6