FY8AAJ-03F Datasheet, PDF (3/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET

FY8AAJ-03F
Performance Curves
Drain Power Dissipation Derating Curve
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
50
Tc = 25°C
Pulse Test
40 VGS = 10V
8V
30
5V
6V
4.5V
4V
3.5V
20
3V
10
PD = 1.7W
0
0
0.4 0.8 1.2 1.6 2.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
1.0
Tc = 25°C
Pulse Test
0.8
0.6
0.4
ID = 16A
0.2
8A
4A
0
0
2
4
6
8
10
Gate-Source Voltage V_GS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
Maximum Safe Operating Area
10²
7
tw = 1 µs
5
3
10 µs
2
10¹
100 µs
7
5
3
1 ms
2
10⁰
10 ms
7
5
3
100 ms
2
10^–1
7
5
Tc = 25°C
Single Pulse
DC
3 _{2 3 5 7 100 2 3 5 7 101 2 3 5}
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
20
VGS =
10V
16
8V
6V
12
4V
4.5V
3.5V
5V
3V
8
Tc = 25°C
Pulse Test
4
PD = 1.7W
0
0 0.2 0.4 0.6 0.8 1.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
40
32 V_GS = 4V
4.5V
24
10V
16
8
Tc = 25°C
Pulse Test
0
10⁰ 2 3 5
7 10¹
23
5 7 10²
Drain Current I_D (A)