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FY8AAJ-03F Datasheet, PDF (2/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET
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FY8AAJ-03F
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Rth(ch-a)
trr
Min.
30
±20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
1.5
22
31
35
0.176
13
600
200
90
10
15
40
6.5
13.8
1.6
3.5
0.75
—
40
Max.
—
—
0.1
±10
2.0
28
43
50
0.224
—
—
—
—
—
—
—
—
—
—
—
1.10
73.5
—
Unit
V
V
mA
µA
V
mΩ
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
°C/W
ns
(Tch = 25°C)
Test conditions
ID = 1 mA, VGS = 0 V
IG = ±100 µA, VDS = 0 V
VDS = 30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 V
ID = 4 A, VGS = 4.5 V
ID = 4 A, VGS = 4 V
ID = 8 A, VGS = 10 V
ID = 8 A, VDS = 10 V
VDS = 10 V, VGS = 0 V,
f = 1MHz
VDD = 15 V, ID = 4 A,
VGS = 10 V, RG = 5 Ω
VDD = 15 V, ID = 8 A,
VGS = 10 V
IS = 1.5 A, VGS = 0 V
Channel to air
IS = 1.5 A, dis/dt = – 50 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
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