FY8AAJ-03F Datasheet, PDF (4/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET

FY8AAJ-03F
Transfer Characteristics (Typical)
50
Tc = 25°C
VDS = 10V
40
Pulse Test
30
20
10
0
0
2
4
6
8
10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
3
Tch = 25°C
2 _{f = 1MHz}
VGS = 0V
10⁴
7
Ciss
5
3
2
Coss
10³
7
Crss
5
3
10^–1 2 3 5 710⁰ 2 3 5 7 10¹ 2 3 5 7 10²
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
10
Tch = 25°C
ID = 8A
8
6
VDS = 15V
20V
4
25V
2
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10³
7 ^{VDS = 10V}
5 ^{Pulse Test}
4
3
Tc = 25°C
2
75°C
125°C
10²
7
5
4
3
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
Drain Current I_D (A)
Switching Characteristics (Typical)
10²
7
5
4
td(off)
3
2
tr
10¹
7
5
4
3
2
10⁰
10⁰
td(on)
tf
2 3 4 5 7 10¹
Tch = 25°C
VDD = 15V
VGS = 10V
RG = 5Ω
2 3 4 5 7 10²
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
50
VGS = 0V
Pulse Test
40
Tc = 125°C
30
20
75°C
25°C
10
0
0 0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage V_SD (V)
Rev.1.00, Aug.20.2004, page 4 of 6