FX6ASJ-03_06 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – High-Speed Switching Use Pch Power MOS FET

FX6ASJ-03
On-State Resistance vs.
Channel Temperature (Typical)
10¹
7
5
VGS = –10V
ID = 1/2 ID
Pulse Test
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
Vin Monitor
RGEN
D.U.T.
Vout
Monitor
RL
RGS
VDD
Threshold Voltage vs.
Channel Temperature (Typical)
– 4.0
– 3.2
VDS = –10V
ID = –1mA
– 2.4
–1.6
– 0.8
0
–50 0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
10²
7
5
3
2
10¹
7
D = 1.0
5 _0.5
3 _0.2
2
10⁰
7
5
3
2
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D
=
tw
T
10^–1_{10–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102}
Pulse Width tw (s)
Switching Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00 Nov 21, 2006 page 5 of 6