FX6ASJ-03_06 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – High-Speed Switching Use Pch Power MOS FET

FX6ASJ-03
Transfer Characteristics (Typical)
–10
Tc = 25°C
V_DS = –10V
– 8 ^{Pulse Test}
–6
–4
–2
0
0 – 2 – 4 – 6 – 8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
10⁴
7 Tch = 25°C
5 f = 1MHz
3 ^{VGS = 0V}
2
10³
7
5
Ciss
3
2
10²
Coss
7
5
Crss
3
2
–3
–5–7–10⁰
–2–3
–5–7–10¹â€“2–3
–5–7–10²
–2–3
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = – 6A
–8
VDS = –10V
–6
– 20V
–4
– 25V
–2
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10¹
7
5
Tc = 25°C
75°C
3
125°C
2
10⁰
7
5
3
2
–10^–1 –2 –3
–5 –7 –10⁰
VDS = – 5V
Pulse Test
–2 –3 –5 –7 –10¹
Drain Current I_D (A)
Switching Characteristics (Typical)
10²
7
5
td(off)
3
2
td(on)
10¹
7
5
tr
3
2
10–⁰_{10–1 –2 –3}
tf
Tch = 25°C
V_DD = –15V
V_GS = –10V
RGEN = RGS = 50Ω
–5 –7–10⁰ –2 –3 –5 –7 –10¹
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–20
VGS = 0V
Pulse Test
–16
–12
–8
Tc = 125°C
–4
75°C
25°C
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Nov 21, 2006 page 4 of 6