FX6ASJ-03_06 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – High-Speed Switching Use Pch Power MOS FET

FX6ASJ-03
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V_(BR)DSS
I_GSS
I_DSS
V_GS(th)
r_DS(ON)
r_DS(ON)
V_DS(ON)
| y_fs |
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_SD
Rth(ch-c)
t_rr
Min.
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–1.8
0.23
0.46
– 0.69
2.6
550
165
45
9
14
32
14
–1.0
—
40
Max.
—
±0.1
–0.1
–2.3
0.29
0.62
– 0.87
—
—
—
—
—
—
—
—
–1.5
6.25
—
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test conditions
I_D = –1 mA, V_GS = 0 V
V_GS = ±20 V, V_DS = 0 V
V_DS = –30 V, V_GS = 0 V
I_D = –1 mA, V_DS = –10 V
I_D = –3 A, V_GS = –10 V
I_D = –1 A, V_GS = – 4 V
I_D = –3 A, V_GS = –10 V
I_D = –3 A, V_DS = – 5 V
V_DS = –10 V, V_GS = 0 V,
f = 1MHz
V_DD = –15 V, I_D = –3 A,
V_GS = –10 V,
R_GEN = R_GS = 50 Ω
I_S = –3 A, V_GS = 0 V
Channel to case
I_S = –3 A, dis/dt = 50 A/µs
Rev.2.00 Nov 21, 2006 page 2 of 6